Deposition apparatus, method of forming thin film using the same, and method of manufacturing organic light emitting display apparatus

ABSTRACT

A deposition apparatus configured to perform a deposition process on a substrate, the deposition apparatus including a chamber having an exhaust opening in a surface, a deposition source in the chamber configured to eject one or more deposition materials toward the substrate, a cooling plate corresponding to an inner surface of the chamber, at which the exhaust opening is formed, a refrigerator contacting the cooling plate, and a pump coupled to the exhaust opening.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2013-0036979, filed on Apr. 4, 2013, in the KoreanIntellectual Property Office, the disclosure of which is incorporatedherein in its entirety by reference.

BACKGROUND

1. Field

The following description relates to a deposition apparatus, a thin filmforming method using the same, and a method of manufacturing an organiclight emitting display apparatus.

2. Description of the Related Art

Semiconductor devices, display apparatuses, and other electronic devicesinclude a plurality of thin films. One method of forming the pluralityof thin films is through a deposition process.

Among display apparatuses, organic light emitting displays areconsidered as the next generation display apparatuses owing tocharacteristics such as wide viewing angle, high contrast, and fastresponse speed.

An organic light emitting display apparatus includes a first electrodeand a second electrode facing each other, an intermediate layerincluding an organic emission layer between the first and secondelectrodes, and one or more various suitable thin films, which may beformed through a deposition process. Further, an encapsulation layer isformed on a second electrode in a display apparatus such as an organiclight emitting display apparatus, and the encapsulation layer mayinclude an organic layer or an inorganic layer.

However, it is not easy to form such an encapsulation layer. Forexample, it is difficult to effectively control deposition processes forforming the encapsulation layer, and thus, there is a limitation informing deposition films having desired characteristics. In addition,there is a limitation in improving characteristics of the encapsulationlayer.

SUMMARY

Aspects of embodiments of the present invention are directed toward adeposition apparatus capable of effectively performing depositionprocesses and improving characteristics of deposition films, a method offorming a thin film using the deposition apparatus, and a method ofmanufacturing an organic light emitting display apparatus.

According to an aspect of embodiments of the present invention, there isprovided a deposition apparatus configured to perform a depositionprocess on a substrate, the deposition apparatus including: a chamberhaving an exhaust opening in a surface; a deposition source in thechamber configured to eject one or more deposition materials toward thesubstrate; a cooling plate corresponding to an inner surface of thechamber, at which the exhaust opening is formed; a refrigeratorcontacting the cooling plate; and a pump coupled to the exhaust opening.

The chamber may have a through hole corresponding to the cooling plate,and the refrigerator passes through the through hole from an outside ofthe chamber so that an end portion of the refrigerator is in the chamberand corresponding to a surface of the cooling plate.

The deposition apparatus may further include a gasket between therefrigerator and the cooling plate.

The cooling plate and the inner surface of the chamber may be separatedfrom each other.

The deposition apparatus may further include a support rod between thecooling plate and the inner surface of the chamber.

The support rod may separate the cooling plate from the inner surface ofthe chamber.

The support rod may be longer than the cooling plate.

The support rod may be elongated to extend beyond both opposite endportions of the cooling plate in a lengthwise direction.

The deposition apparatus may further include a heating member betweenthe cooling plate and the inner surface of the chamber, the heatingmember being separated from the refrigerator.

The heating member may contact the cooling plate.

The cooling plate may include cooling plates that are positioned atopposite sides of the exhaust opening.

The cooling plate may include cooling plates that surround the exhaustopening.

The cooling plates may be integrally formed with each other.

The deposition apparatus may further include a lattice member configuredto contact a surface of the cooling plate opposite to a surface facingthe refrigerator.

The deposition source and the exhaust opening may be positioned tocorrespond to a same surface of the chamber.

The deposition source may be at a lower surface of the chamber, and theexhaust opening may be at a side surface of the chamber.

The substrate may be on a first side surface of the chamber, and theexhaust opening may be at a second side surface of the chamber facingthe first side surface of the chamber.

The substrate or the deposition source may be capable of moving during adeposition process.

The deposition apparatus may further include a compressor coupled to therefrigerator and be configured to process a cooling material in therefrigerator.

The deposition material may include an organic monomer.

The deposition apparatus may further include an evaporation unit at anoutside of the chamber and coupled to the deposition source.

The evaporation unit may be configured to receive a deposition materialof a liquid phase from a liquid phase material supply device, tovaporize the liquid phase deposition material, and to supply thevaporized deposition material to the deposition source.

According to an aspect of embodiments of the present invention, there isprovided a method of forming a thin film by performing a depositionprocess on a substrate using a deposition apparatus, the methodincluding: carrying the substrate into a chamber; ejecting one or moredeposition materials toward the substrate using a deposition source inthe chamber; and capturing the deposition materials remaining in thechamber using a cooling plate coupled to a refrigerator andcorresponding to an inner surface of the chamber, at which an exhaustopening is formed.

The deposition process may be performed while moving the substrate orthe deposition source.

A cooling material in the refrigerator may be processed using acompressor.

According to another aspect of embodiments of the present invention,there is provided a method of manufacturing an organic light emittingdisplay apparatus using a deposition apparatus, the method includingforming at least one thin film in the organic light emitting displayapparatus, wherein the forming of the at least one thin film includes:carrying a substrate into a chamber; ejecting one or more depositionmaterials toward the substrate using a deposition source in the chamber;and capturing the deposition materials remaining in the chamber using acooling plate coupled to a refrigerator and corresponding to an innersurface of the chamber, at which an exhaust opening is formed.

The organic light emitting display apparatus includes a first electrode,an intermediate layer including an organic emission layer, a secondelectrode, and an encapsulation layer on the substrate, theencapsulation layer including at least one thin film.

The encapsulation layer may include an organic layer and an inorganiclayer the organic layer including the at least one thin film.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and aspects of the present invention willbecome more apparent by describing in detail example embodiments thereofwith reference to the attached drawings in which:

FIG. 1 is a schematic diagram of a deposition apparatus, according to anexample embodiment of the present invention;

FIG. 2 is an enlarged view of the portion A in FIG. 1, according to anexample embodiment of the present invention;

FIG. 3 is a plan view of the deposition apparatus seen from a directionof K in FIG. 1 with some of the hidden components shown in phantomlines, according to an example embodiment of the present invention;

FIG. 4 is a schematic diagram showing a modified example of thedeposition apparatus of FIG. 1, according to an example embodiment ofthe present invention;

FIG. 5 is a diagram showing the deposition apparatus of FIG. 4 seen froma direction of K, according to an example embodiment of the presentinvention;

FIG. 6 is a schematic diagram of a deposition apparatus, according toanother example embodiment of the present invention;

FIG. 7 is a diagram showing the deposition apparatus of FIG. 6 seen froma direction of K, according to an example embodiment of the presentinvention;

FIGS. 8 and 9 are diagrams showing modified examples of the depositionapparatus of FIG. 6, according to some embodiments of the presentinvention;

FIG. 10 is a schematic diagram showing a deposition apparatus, accordingto another example embodiment of the present invention;

FIG. 11 is a schematic cross-sectional view of an organic light emittingdisplay apparatus manufactured using a deposition apparatus, accordingto an example embodiment of the present invention; and

FIG. 12 is an enlarged view of a portion F in FIG. 11, according to anexample embodiment of the present invention.

DETAILED DESCRIPTION

Hereinafter, embodiments of the present invention will be described indetail with reference to accompanying drawings.

FIG. 1 is a schematic diagram showing a deposition apparatus 100,according to an example embodiment of the present invention, FIG. 2 isan enlarged view of a portion A in FIG. 1, according to an embodiment ofthe present invention, and FIG. 3 is a diagram of the depositionapparatus 100 seen from a direction of K in FIG. 1, according to anembodiment of the present invention.

Referring to FIGS. 1 through 3, the deposition apparatus 100 includes achamber 101, a deposition source 110, a pump 120, a cooling plate 131, arefrigerator 141, and a compressor 150.

The chamber 101 is formed to maintain atmosphere of a deposition spacein which deposition processes are performed. The chamber 101 includesone or more entries for carrying substrates S in and out of the chamber101. Also, the chamber 101 has an exhaust hole (e.g., an exhaustopening) 101 b for controlling a pressure environment during thedeposition processes. In addition, the chamber 101 includes a throughhole 101 a that corresponds to the refrigerator 141 that will bedescribed later.

The deposition source 110 is located (e.g., positioned or disposed) inthe chamber 101. The deposition source 110 may be fixed at a side of thechamber 101, for example, a lower surface of the chamber 101. Thedeposition source 110 may include one or more nozzles for ejecting adeposition material toward the substrates S. The deposition source 110may further include a hardening unit for hardening a deposition layerafter forming the deposition layer on the substrate S using thedeposition material.

An evaporation unit 112 may be coupled to (or connected to) thedeposition source 110 via a connection member 115. The evaporation unit112 supplies the deposition material that is evaporated from a liquidphase to the deposition source 110. A liquid material supply device iscoupled to the evaporation unit 112 to supply the liquid material to theevaporation unit 112, and the evaporation unit 112 evaporates the liquidmaterial, which may include an organic monomer, and supplies gas phasematerial to the deposition source 110. For example, the depositionsource 110 supplies the deposition material containing organic monomerto the substrates S to form the deposition layer including an organicmaterial.

The substrate S that is a deposition target on which the depositionprocess is to be performed is located on an upper portion of thedeposition source 110. The substrate S may be fixed on a stage 160, forexample, using a clamp.

In one embodiment, the stage 160 may selectively move. For example, asshown in FIG. 1, the stage 160 may reciprocate between M1 and M2directions. Thus, the deposition process may be performed while thesubstrate S moves relative to the deposition source 110. A driving unitmay be additionally located or a driving member may be formed in thestage 160 to drive the stage 160. However, embodiments of the presentinvention are not limited thereto, and the stage 160 may be fixed.

The pump 120 is located on an outer portion of the chamber 101. The pump120 is coupled to the exhaust hole (e.g., an exhaust opening) 101 b ofthe chamber 101 to control the pressure and cleanliness (i.e., thequality of having low levels of environmental pollutants andcontaminants) of the environment in the chamber 101 during thedeposition process. The pump 120 may be any one of various suitablekinds of pumps, for example, a turbo pump or a cryo pump.

Two cooling plates 131 are located around the exhaust hole 101 b in thechamber 101. In one embodiment, the two cooling plates 131 are locatedon opposite sides of the exhaust hole 101 b, with the exhaust hole 101 binterposed therebetween. The cooling plates 131 may be formed of a metalmaterial having excellent thermal conductivity, for example, copper, andin particular, oxygen-free copper. The cooling plates 131 capture thedeposition material remaining in the chamber 101 after the depositionprocess to maintain the cleanliness of the chamber 101. For example, thecooling plates 131 may prevent the remaining deposition material frombeing sucked by the pump 120 via the exhaust hole 101 b and fromdamaging the pump 120.

Further, when the deposition process is performed, the depositionmaterial existing in the chamber 101, not being deposited on thesubstrate S, or moving toward the exhaust hole 101 b due to theoperation of the pump 120, may be captured by the cooling plates 131 toprevent the damage of the pump 120.

Two refrigerators 141 may be coupled to one cooling plate 131. In oneembodiment, the refrigerators 141 are directly coupled to the coolingplate 131 without a connection member such as a hose or a pipe. Forexample, a region (e.g., a preset or predetermined region) on a lowersurface of the cooling plate 131 contacts the refrigerators 141. Assuch, a temperature of the cooling plate 131 may be maintained at a low(e.g., an extremely low) temperature.

A cooling material such as helium is contained in the refrigerators 141,and members for freezing, for example, a heat exchanger, a condenser,and other components may be included in each of the refrigerators 141.

The refrigerators 141 may be coupled to a compressor 150, and thecooling material (e.g., helium) is transferred to the compressor 150 viaa discharge pipe 155 a to be processed (e.g., successively processed),and then, may be transferred to the refrigerators 141 again via anintroduction pipe 155 b.

As shown in FIG. 3, the cooling plates 131 may be formed as rectangles(e.g., may have a rectangular shape) extending along a direction.

The refrigerators 141 extend from the outside of the chamber 101 intothe chamber 101. For example, the refrigerators 141 pass through thechamber 101 via the through hole 101 a of the chamber 101 so that an endof the refrigerator 141 contacts the lower surface of the cooling plate131 located in the chamber 101.

In one embodiment, a gasket 170 may be located between the refrigerator141 and each of the cooling plates 131 so as to stably maintain acontact status between the refrigerator 141 and the cooling plates 131.The gasket 170 may include aluminium or indium having excellent thermalconductivity. The gasket 170 may be formed as a thin disk, a surface ofwhich is adhered to the refrigerator 141 and the other surface of whichis adhered to the cooling plate 131. As such, cooling material may betransferred from the refrigerator 141 to the cooling plates 131.

Support rods 180 are located between the cooling plate 131 and thechamber 101. Thus, the cooling plate 131 is separated from the chamber101. The refrigerator 141 extends into the chamber 101 to a height(e.g., a predetermined height) to contact the cooling plate 131.

Two support rods 180 are located between the cooling plate 131 and aninner surface of the chamber 101. The support rods 180 are separatedfrom the refrigerators 141. The support rods 180 are elongated tocorrespond to a length of the cooling plate 131 along a direction (e.g.,the Y direction shown in FIG. 3), and in particular, are longer than atleast a length of the cooling plate 131 along the said direction so asto reach regions (e.g., predetermined regions) of the chamber 101 beyondopposite ends of the cooling plate 131.

The cooling plates 131 may be attached to/detached from the inside ofthe chamber 101 using the support rods 180. For example, there is noneed to contact the cooling plate 131 to the inner surface of thechamber 101 in order to fix the cooling plates 131. Because the supportrods 180 are longer than the cooling plates 131, the cooling plates 131may easily be located on the support rods 180.

Also, because a part (e.g., a predetermined part) of the refrigerator141 is located in the chamber 101 so as to contact the cooling plate 131via the support rods 180, the contacting status between the refrigerator141 and the cooling plate 131 may be stably maintained and therefrigerator 141 does not vibrate in the through hole 101 a.

A heating member 190 is located to correspond to the lower surface ofthe cooling plate 131. For example, the heating member 190 is located ina separation space between the cooling plate 131 and the chamber 101 dueto the support rods 180. In one embodiment, the heating member 190contacts the lower surface of the cooling plate 131. The heating member190 may be formed as a coil.

As described above, the cooling plates 131 capture the depositionmaterial remaining in the chamber 101, and the captured depositionmaterial is attached to the cooling plate 131 in a solid phase. Afterperforming the deposition process, the deposition material attached tothe cooling plates 131 may be removed using the heating member 190.

As shown in FIG. 3, the heating member 190 is bent in several places(each bend may be in a U-shape) and may span the entire surface of thecooling plate 131 and be separated from the refrigerator 141. Althoughnot shown in FIG. 3, a power source is coupled to the heating member190. The heating member 190 does not operate during the depositionprocess so as not to degrade the property of the cooling plate 131.

Operations and effects of the deposition apparatus 100, according to thepresent embodiment, will be described below. The deposition apparatus100 includes the deposition source 110 for forming the deposition layeron the substrate S. In one embodiment, the deposition source 110 maysupply the deposition material containing the organic monomer to thesubstrate S as a gas phase.

The vaporized deposition material reaches the substrate S and forms adesired deposition layer. In one embodiment, the deposition materialremaining in the chamber 101 after forming the deposition layer, or thedeposition material floating in the chamber 101 without involving in thedeposition process, after being ejected from the deposition source 110,may affect subsequent deposition processes, thereby degradingcharacteristics of (or contaminating) subsequent deposition layers. Whensuch deposition material is induced into the pump 120 through theexhaust hole 101 b, characteristics of the pump 120 may be degraded, thedeposition process environment in the chamber 101 may be degraded (e.g.,polluted), and/or the pump 120 may be damaged.

In the present embodiment, the cooling plates 131 are located in thechamber 101 so as to capture the remaining deposition material in thechamber 101 and to maintain cleanliness (e.g., reduce contaminants) inthe chamber 101, and thus, the characteristics of the pump 120 may bemaintained and characteristics of the deposition layer may be improved.In one embodiment, the cooling plates 131 are located on opposite sidesof the exhaust hole 101 b that is coupled to the pump 120, and thus, theremaining deposition material may be effectively guided toward thecooling plates 131 and a capturing property may be improved.

As a result of the operation of the pump 120 connected to the exhausthole 101 b, the small amount of deposition material remaining in thechamber 101 without being deposited on the substrate S may move towardthe exhaust hole 101 b and its peripheral area, and accordingly, thecooling plates 131 located adjacent to the exhaust hole 101 b maycapture the deposition material.

Further, the refrigerators 141 are directly coupled to the lowersurfaces of the cooling plates 131 so as to lower the temperature of thecooling plates 131 effectively, thereby increasing the capturing effect.Additionally, the heating member 190 is located on a region of the lowersurface of the cooling plates 131, regardless of the deposition process,so as to remove the deposition material captured by the cooling plates131 after finishing the deposition process.

In an embodiment in which the cooling plates 131 are located in thechamber 101, the cooling plates 131 are located on the support rods 180so as to be separated from the inner wall of the chamber 101, and thus,the cooling plates 131 may be located on the desired location in thechamber 101 and may be separated therefrom.

FIG. 4 is a diagram showing a modified example of the depositionapparatus 100 shown in FIG. 1, according to an embodiment of the presentinvention, and FIG. 5 is a diagram of the deposition apparatus of FIG. 4seen from a direction K, according to an example embodiment of thepresent invention.

Referring to FIGS. 4 and 5, the deposition apparatus includes a chamber101′, a deposition source, a pump, cooling plates 131′, a refrigerator141′, and a compressor. The deposition apparatus shown in FIGS. 4 and 5is different from that of the previous embodiment in view ofadditionally including a lattice member 135.

The lattice member 135 is located to contact upper surfaces of thecooling plates 131′, and includes a portion extending in a firstdirection and a portion extending in a second direction perpendicular tothe first direction. The lattice member 135 may be formed of a metalmaterial having excellent thermal conductivity. When using the latticemember 135 with the cooling plates 131′, the capturing property of thedeposition material remaining within the chamber 101′ may be improved.

Other components are the same as those of the previous embodiment, andtheir detailed descriptions will not be repeated.

FIG. 6 is a schematic diagram of a deposition apparatus 200, accordingto another embodiment of the present invention, and FIG. 7 is a diagramof the deposition apparatus of FIG. 6 seen from a direction K, accordingto an example embodiment of the present invention.

Referring to FIGS. 6 and 7, the deposition apparatus 200 includes achamber 201, a deposition source 210, a pump 220, cooling plates 231,refrigerators 241, and a compressor 250.

The chamber 201 is formed to properly maintain the environment of adeposition space in which deposition processes are performed. Thechamber 201 includes one or more entries for carrying in and carryingout a substrate S. Additionally, the chamber 201 includes an exhausthole (e.g., an exhaust opening) 201 b at a side surface thereof so as tocontrol a pressure during the deposition processes. Further, the chamber201 includes a through hole (e.g., a through opening) that correspondsto the refrigerators 241 that will be described later.

The deposition source 210 is located in the chamber 201. The depositionsource 210 is located at a side of the chamber 201, for example, a lowersurface of the chamber 201, and the deposition source 210 may be capableof moving in one or more directions. For example, as shown in FIG. 6,the deposition source 210 may reciprocate between a direction M1 and anopposite direction M2.

The deposition source 210 may include a nozzle for supplying adeposition material toward the substrate S. In addition, the depositionsource 210 may include a hardening portion for hardening a depositionlayer after the deposition layer is formed on the substrate S byselectively using the deposition material.

An evaporation unit 212 may be coupled to the deposition source 210 viaa connection member 215. Additionally, a liquid phase material supplyapparatus is coupled to the evaporation unit 212 to supply thedeposition material of a liquid phase to the evaporation unit 212, andthe evaporation unit 212 vaporizes the deposition material and suppliesthe deposition material to the deposition source 210.

The substrate S that is a deposition target on which the depositionprocesses will be performed is located on an upper portion of thedeposition source 210. The substrate S may be fixed on a stage 260. Todo this, the substrate S may be fixed on the stage 260 using a membersuch as a clamp.

The pump 220 is located out of the chamber 201. The pump 220 is coupledto the exhaust hole 201 b of the chamber 201 to control pressureenvironment of the deposition process and cleanliness of the chamber201. The exhaust hole 201 b is located at a side surface of the chamber201. For example, the exhaust hole 201 b is located at a surface of thechamber 201, which is adjacent to a surface on which the depositionsource 210 is located. For example, the deposition source 210 may belocated on the lower surface of the chamber 201, and the exhaust hole201 b may be located in the side surface of the chamber 201.

Two cooling plates 231 are located around the exhaust hole 201 b in thechamber 201. In one embodiment, the two cooling plates 231 correspond to(e.g., are mounted at) a side surface of the chamber 201, and may bepositioned at opposite sides of the exhaust hole 201 b.

Two refrigerators 241 are coupled respectively to the cooling plates231. In an embodiment, the refrigerators 241 are directly coupled to thecooling plates 231 without using a connection member such as a hose or apipe. For example, an area (e.g., predetermined area) of a lower surface(e.g., the surface facing the wall of the chamber 201) of each coolingplate 231 contacts the refrigerator 241.

A cooling material such as helium is contained in the refrigerators 241,and members for freezing, such as a heat exchanger, a condenser, andother components may be included in each of the refrigerators 241.

The refrigerators 241 may be coupled to the compressor 250, and thecooling material (e.g., helium) is transferred to the compressor 250 viaa discharge pipe 255 a to be processed, and then, may be transferred tothe refrigerators 241 again via an introduction pipe 255 b.

As shown in FIG. 7, each of the cooling plates 231 may be formed as arectangle (e.g., have a rectangular shape) extending in a direction.

Each of the refrigerators 241 extends from an outside of the chamber 201into the chamber 201. For example, the refrigerator 241 passes throughthe chamber 201 via a through hole (e.g., a through opening) of thechamber 201 so that an end of the refrigerator 241 contacts the lowersurface of the cooling plate 231 that is located in the chamber 201.Although not shown in FIG. 7, a gasket may be located between therefrigerator 241 and the cooling plate 231.

Support rods 280 are located between each of the cooling plates 231 andthe chamber 201. As such, the cooling plates 231 are separated from thechamber 201. The refrigerators 241 extend into the chamber 201 to aheight (e.g., predetermined height) so as to contact the cooling plates231.

Two support rods 280 are located between each of the cooling plates 231and an inner side surface of the chamber 201 so as to support thecooling plate 231. The support rods 280 are separated from therefrigerators 241. The support rods 280 are elongated to correspond to awidth of the cooling plate 231 in a direction, and are formed to belonger than the width of the cooling plate 231 in the length directionso as to exceed the cooling plate 231 to a region (e.g., predeterminedregion) of the chamber 201 as shown in FIG. 7.

The cooling plates 231 may be conveniently located in/separated from theinside of the chamber 201 using the support rods 280. Thus, there is noneed to make the cooling plates 231 contact the side surface of thechamber 201 to fix the cooling plates 231. Because the support rods 280are longer than the cooling plates 231, the cooling plates 231 may belocated on the support rods 280.

A heating member may be located to correspond to the lower surface ofthe cooling plate 231.

The cooling plates 231, the refrigerators 241, the support rods 280, theheating member, and the gasket are similar to those of the previousembodiment, and thus, detailed descriptions thereof are not providedhere.

Operations and effects of the deposition apparatus 200, according to thepresent embodiment, will be described. The deposition apparatus 200includes a deposition source 210 for forming a deposition layer on thesubstrate S. In one embodiment, the deposition source 210 may supply thedeposition material containing an organic monomer to the substrate S ina gas state (or in gas phase).

The deposition material in gas phase reaches the substrate S to form adesired deposition layer. Here, the deposition source 210 is located tocorrespond to the lower surface of the chamber 201, and the depositionprocess may be performed while moving the deposition source 210 withrespect to the substrate S. In addition, the exhaust hole 201 b may beformed in the side surface of the chamber 201 to control the movement ofthe deposition source 210.

The deposition material remaining in the chamber 201 after forming adeposition layer on the substrate S using the deposition source 210, orthe deposition material that is not involved in the deposition processafter being ejected from the deposition source 210, but exists in thechamber 201, may affect next deposition processes, thereby degradingcharacteristics of the deposition layers. Further, when such thedeposition material is introduced in the pump 220 via the exhaust hole201 b, performance of the pump 220 may be degraded, and thus, thedeposition environment characteristic in the chamber 201 may be degradedand the pump 220 may be damaged.

In the present embodiment, the cooling plates 231 are located in thechamber 201 so as to capture the deposition material remaining in thechamber 201, and thus, cleanliness in the chamber 201 may be maintainedand characteristics of the pump 220 may be maintained, thereby improvingcharacteristics of the deposition layers.

The exhaust hole 201 b coupled to the pump 220 and the deposition source210 are located on different surfaces of the chamber 201, for example,the exhaust hole 201 b may be formed in the side surface of the chamber201 and the deposition source 210 may be located on the lower surface ofthe chamber 201, so that affects to the deposition source 210 and thesubstrate S during exhausting and pressure controlling operationsthrough the exhaust hole 201 b may be reduced.

In addition, the cooling plates 231 are located on opposite sides of theexhaust hole 201 b to be adjacent to the exhaust hole 201 b to improvethe deposition material capturing property of the cooling plates 231. Inone embodiment, the cooling plates 231 are formed on the side surface ofthe chamber 201 to be adjacent to the exhaust hole 201 b so as not toaffect the deposition source 210 and the substrate S located on thelower surface of the chamber 201 when capturing the remaining depositionmaterial.

FIGS. 8 and 9 are diagrams showing modified examples of the depositionapparatus 200 of FIG. 6, according to some embodiments of the presentinvention. For example, according to the embodiments of the presentinvention, the cooling plates 231 may be located at opposite sides ofthe exhaust hole 201 b as shown in FIG. 7, and moreover, four coolingplates 231′ may be positioned to surround an exhaust hole (e.g., anexhaust opening) 201 b′ as shown in FIG. 8. By forming the four coolingplates 231′ surrounding the exhaust hole 201 b′, introduction of thedeposition material into the exhaust hole 201 b′ may be prevented, andthe cooling plates 231′ may more easily capture the deposition material.

Further, as shown in FIG. 9, an integrated (e.g., one-piece) coolingplate 231″ may be formed to surround an exhaust hole (e.g., an exhaustopening) 201 b″.

Although not shown in the drawings, the modified examples shown in FIGS.8 and 9 may be applied to the previous embodiments.

FIG. 10 is a schematic diagram of a deposition apparatus 300, accordingto another example embodiment of the present invention.

Referring to FIG. 10, the deposition apparatus 300 includes a chamber301, a deposition source 310, a pump 320, cooling plates 331,refrigerators 341, and a compressor 350.

The chamber 301 is formed to properly maintain an environment of adeposition space in which deposition processes are performed. Thechamber 301 includes one or more entries for carrying in and carryingout a substrate S. Additionally, the chamber 301 includes an exhausthole (e.g., an exhaust opening) 301 b at a side surface thereof so as tocontrol a pressure during the deposition processes. Further, the chamber301 includes a through hole that corresponds to the refrigerators 341that will be described later.

The substrate S that is a deposition target on which the depositionprocesses will be performed is located on an upper portion of thedeposition source 310. The substrate S is located on a side surface ofthe chamber 301. Although not shown in FIG. 10, the chamber 301 may befixed on a stage that is located on the side surface of the chamber 301.

The deposition source 310 is located in the chamber 301. The depositionsource 310 faces the substrate S. The deposition source 310 may becapable of moving in one or more directions, and for example, mayreciprocate between opposite directions M1 and M2 as shown in FIG. 10.

The deposition source 310 may include a nozzle for supplying adeposition material toward the substrate S. In addition, the depositionsource 310 may include a hardening portion for hardening a depositionlayer after the deposition layer is formed on the substrate S byselectively using the deposition material.

An evaporation unit 312 may be coupled to the deposition source 310 viaa connection member 315. A liquid phase material supply apparatus may becoupled to the evaporation unit 312 to supply the deposition material ofa liquid phase to the evaporation unit 312, and the evaporation unit 312vaporizes the deposition material and supplies the deposition materialto the deposition source 310.

The pump 320 is located out of the chamber 301. The pump 320 is coupledto the exhaust hole 301 b of the chamber 301 to control pressureenvironment of the deposition process and cleanliness of the chamber301. The exhaust hole 301 b is located at a side surface of the chamber301. For example, the exhaust hole 301 b is located in a surface of thechamber 301, which faces the surface on which the substrate S islocated.

Two cooling plates 331 are located around the exhaust hole 301 b in thechamber 301. In one embodiment, the two cooling plates 331 correspond to(e.g., are mounted at) a side surface of the chamber 301, and may bepositioned at opposite sides of the exhaust hole 301 b.

Two refrigerators 341 are coupled respectively to the cooling plates331. In an embodiment, the refrigerators 341 are directly coupled to thecooling plates 331 without using a connection member such as a hose or apipe. For example, an area (e.g., predetermined area) of a lower surfaceof each cooling plate 331 contacts the refrigerator 341.

A cooling material such as helium is contained in the refrigerators 341,and members for freezing, such as a heat exchanger, a condenser, andother components may be included in each of the refrigerators 341.

The refrigerators 341 may be coupled to the compressor 350, and thecooling material (for example, helium) is transferred to the compressor350 via a discharge pipe 355 a to be processed, and then, may betransferred to the refrigerators 341 again via an introduction pipe 355b.

Each of the cooling plates 331 may be formed as a rectangle (e.g., havea rectangular shape) extending in a direction.

Each of the refrigerators 341 extends from an outside of the chamber 301into the chamber 301. For example, the refrigerator 341 passes throughthe chamber 301 via a through hole of the chamber 301 so that an end ofthe refrigerator 341 contacts the lower surface (e.g., the surfacefacing the wall of the chamber 301) of the cooling plate 331 that islocated in the chamber 301. Although not shown in FIG. 10, a gasket maybe located between the refrigerator 341 and the cooling plate 331.

Support rods are located between each of the cooling plates 331 and thechamber 301. As such, the cooling plates 331 are separated from thechamber 301. A heating member is located to correspond to the lowersurface of the cooling plate 331.

Configurations of the cooling plates 331, the refrigerators 341, thesupport rods 380, the heating member, and the gasket are similar tothose of the previous embodiment, and thus, detailed descriptionsthereof are not provided here.

Operations and effects of the deposition apparatus 300, according to thepresent embodiment, will be described. The deposition apparatus 300includes a deposition source 310 for forming a deposition layer on thesubstrate S. In one embodiment, the deposition source 310 may supply thedeposition material containing an organic monomer to the substrate S ina gas state (or gas phase).

The deposition material in gas phase reaches the substrate S to form adesired deposition layer. Here, the substrate S is located on the sidesurface of the chamber 301, and the deposition source 310 is formed toface the substrate S and move in the chamber 301, so that the depositionprocess may be performed while moving the deposition source 310 relativeto the substrate S. In addition, the exhaust hole 301 b may be formed inthe side surface of the chamber 301 to control the movement of thedeposition source 210 without being affected by the exhaust hole 301 band the cooling plates 331.

The deposition material remaining in the chamber 301 after forming adeposition layer on the substrate S using the deposition source 310, orthe deposition material that is not involved in the deposition processafter being ejected from the deposition source 310, but exists in thechamber 301, may affect next deposition processes, thereby degradingcharacteristics of the deposition layers. Further, when such thedeposition material is introduced in the pump 320 via the exhaust hole301 b, performance of the pump 320 may be degraded, and thus, thedeposition environment characteristic in the chamber 301 may be degradedand the chamber 301 may be damaged.

In the present embodiment, the cooling plates 331 are located in thechamber 301 so as to capture the deposition material remaining in thechamber 301, and thus, cleanliness in the chamber 301 may be maintainedand characteristics of the pump 320 may be maintained, thereby improvingcharacteristics of the deposition layers.

In addition, the cooling plates 331 are located on opposite sides of theexhaust hole 301 b to be adjacent to the exhaust hole 301 b to improvethe deposition material capturing property of the cooling plates 331. Inone embodiment, the cooling plates 331 are formed on the side surface ofthe chamber 301 to be adjacent to the exhaust hole 301 b so as not toaffect the deposition source 310 and the substrate S when capturing theremaining deposition material.

Further, the exhaust hole 301 b coupled to the pump 320 and thesubstrate S are located on different surfaces of the chamber 301, suchas surfaces facing each other, so as to reduce (e.g., minimize) adverseeffects that the exhaustion and a pressure control operation through theexhaust hole 301 b may have on the deposition source 310 and thesubstrate S.

Structures shown in FIGS. 8 and 9 may also be applied to the depositionapparatus 300 of FIG. 10, according to the present embodiment.

FIG. 11 is a schematic cross-sectional view of an organic light emittingdisplay apparatus 10 manufactured using a deposition apparatus,according to the embodiment of the present invention, and FIG. 12 is anenlarged view of a portion F shown in FIG. 11, according to someembodiments of the present invention.

Referring to FIGS. 11 and 12, the organic light emitting displayapparatus 10 is formed on a substrate 30. The substrate 30 may be formedof a glass material, a plastic material, and/or a metal material.

A buffer layer 31 providing a flat surface on the substrate 30 andincluding an insulating material for preventing moisture and impuritiesfrom infiltrating into the substrate 30 is formed on the substrate 30.

A thin film transistor (TFT) 40, a capacitor 50, and an organic lightemitting device 60 are formed on the buffer layer 31. The TFT 40includes an active layer 41, a gate electrode 42, and source/drainelectrodes 43. The organic light emitting device 60 includes a firstelectrode 61, a second electrode 62, and an intermediate layer 63. Thecapacitor 50 includes a first capacitor electrode 51 and a secondcapacitor electrode 52.

In one embodiment, the active layer 41 having a pattern (e.g., apredetermined pattern) is located on the buffer layer 31. The activelayer 41 may include an inorganic semiconductor material such assilicon, an organic semiconductor material, and/or an oxidesemiconductor material, and may be formed by injecting p-type or n-typedopant selectively.

A gate insulating layer 32 is formed on the active layer 41. A gateelectrode 42 is formed on the gate insulating layer 32 to correspond tothe active layer 41. The first capacitor electrode 51 may be formed onthe gate insulating layer 32, and may be formed of a material that isthe same as that forming the gate electrode 42.

An interlayer dielectric 33 is formed to cover the gate electrode 42,and the source/drain electrodes 43 are formed on the interlayerdielectric 33 to contact regions (e.g., predetermined regions) of theactive layer 41. The second capacitor electrode 52 may be formed on theinterlayer dielectric 33 and may be formed of the same material as thatof the source/drain electrodes 43.

A passivation layer 34 is formed to cover the source/drain electrodes43, and an additional insulating layer may be further formed on thepassivation layer 34 for planarizing the TFT 40.

The first electrode 61 is formed on the passivation layer 34. The firstelectrode 61 is electrically coupled to one of the source/drainelectrodes 43. In addition, a pixel defining layer 35 is formed to coverthe first electrode 61. An opening (e.g., a predetermined opening) 64 isformed in the pixel defining layer 35, and the intermediate layer 63including an organic emission layer is formed in a region defined by theopening 64. The second electrode 62 is formed on the intermediate layer63.

An encapsulation layer 70 is formed on the second electrode 62. Theencapsulation layer 70 may include an organic material or an inorganicmaterial, or may have a structure in which the organic material and theinorganic material are alternately stacked.

In some embodiments, the encapsulation layer 70 may be formed using thedeposition apparatus 100, 200, or 300. For example, the substrate 30 onwhich the second electrode 62 is formed is carried into the chamber 101,201, or 301, and after that, a desired layer may be formed using thedeposition apparatus 100, 200, or 300, or a modified example thereof.

In one embodiment, the encapsulation layer 70 includes an inorganiclayer 71 and an organic layer 72, and the inorganic layer 71 includes aplurality of sub-layers 71 a, 71 b, and 71 c and the organic layer 72includes a plurality of sub-layers 72 a, 72 b, and 72 c. Here, thelayers 72 a, 72 b, and 72 c in the organic layer 72 may be formed usingthe deposition apparatus 100, 200, or 300.

However, the embodiments of the present invention are not limitedthereto, and other organic layers in the organic light emitting displayapparatus 10 may be formed.

As described above, when using the deposition apparatus 100, 200, or300, according to the embodiments of the present invention,characteristics of the deposition layers formed in the organic lightemitting display apparatus 10 may be improved. Thus, electrical propertyand image quality, of the organic light emitting display apparatus 10may be improved.

Further, the deposition apparatus 100, 200, or 300, according to theembodiments of the present invention, may form thin films in a liquidcrystal display apparatus or in other various suitable displayapparatuses, in addition to the organic light emitting display apparatus10.

According to the deposition apparatus and through the method of forminga thin film, and the method of manufacturing the organic light emittingdisplay apparatus of the present invention, the deposition processes maybe performed effectively, and characteristics of deposition layers maybe improved.

While the present invention has been particularly shown and describedwith reference to example embodiments thereof, it will be understood bythose of ordinary skill in the art that various suitable changes in formand details may be made therein without departing from the spirit andscope of the present invention as defined by the following claims, andequivalents thereof.

What is claimed is:
 1. A deposition apparatus configured to perform adeposition process on a substrate, the deposition apparatus comprising:a chamber having an exhaust opening in a first surface of an interior ofthe chamber; a deposition source in the chamber and configured to ejectone or more deposition materials toward the substrate, the depositionsource facing the substrate, the deposition source being configured tomove relative to the chamber during the deposition process; a pluralityof cooling plates at the first surface of the chamber, at which theexhaust opening is formed, the plurality of cooling plates beingarranged to surround the exhaust opening; a first refrigerator and asecond refrigerator spaced from the first refrigerator both the firstand second refrigerators being coupled to a bottom surface of a coolingplate of the plurality of cooling plates through a first gasket and asecond gasket in the chamber, bottom surfaces of the plurality ofcooling plates facing the first surface of the chamber; a pump coupledto the exhaust opening; a heating member in the chamber between thecooling plate and the first surface of the chamber, the heating membercontacting portions of the bottom surface of the cooling plate andhaving U-shaped bends partially encompassing the first and secondrefrigerators along extension directions of the cooling plate; and firstand second support rods located between the cooling plate and the firstsurface of the chamber and elongated to extend beyond both opposite endportions of the cooling plate along a lengthwise direction of thecooling plate, the heating member being separated from the first andsecond rods and arranged in a separation space between the first andsecond rods, wherein the cooling plate is positioned between the exhaustopening coupled to the pump and the deposition source.
 2. The depositionapparatus of claim 1, wherein the chamber has through holescorresponding to the cooling plate, and each of the first and secondrefrigerators passes through a respective one of the through holes froman outside of the chamber so that an end portion of each of the firstand second refrigerators is in the chamber and corresponding to thebottom surface of the cooling plate.
 3. The deposition apparatus ofclaim 1, wherein each of the first and second gaskets comprises a diskadhered to a respective one of the first and second refrigerators andthe bottom surface of the cooling plate.
 4. The deposition apparatus ofclaim 1, wherein the cooling plate and the first surface of the chamberare separated from each other.
 5. The deposition apparatus of claim 1,wherein the first and second support rods separate the cooling platefrom the first surface of the chamber.
 6. The deposition apparatus ofclaim 1, wherein the first and second support rods are longer than thecooling plate.
 7. The deposition apparatus of claim 1, wherein theheating member is separated from the first and second refrigerators. 8.The deposition apparatus of claim 1, wherein the deposition source andthe exhaust opening are positioned to correspond to a same surface ofthe chamber.
 9. The deposition apparatus of claim 1, further comprisinga compressor coupled to the first and second refrigerators andconfigured to process a cooling material in the first and secondrefrigerators.
 10. The deposition apparatus of claim 1, wherein thedeposition material comprises an organic monomer.
 11. The depositionapparatus of claim 1, further comprising an evaporation unit at anoutside of the chamber and coupled to the deposition source.
 12. Thedeposition apparatus of claim 11, wherein the evaporation unit isconfigured to receive a liquid phase deposition material from a liquidphase material supply device, to vaporize the liquid phase depositionmaterial, and to supply the vaporized deposition material to thedeposition source.